Enhancing strained device performance by use of multi narrow section layout

ABSTRACT

A semiconductor device having high tensile stress. The semiconductor device comprises a substrate having a source region and a drain region. Each of the source region and the drain region includes a plurality of separated source sections and drain sections, respectively. A shallow trench isolation (STI) region is formed between two separated source sections of the source region and between two separated drain sections of the drain region. A gate stack is formed on the substrate. A tensile inducing layer is formed over the substrate. The tensile inducing layer covers the STI regions, the source region, the drain region, and the gate stack. The tensile inducing layer is an insulation capable of causing tensile stress in the substrate.

RELATED APPLICATION

This is a divisional application of U.S. patent application Ser. No.10/815.911, filed on Mar. 31, 2004, now U.S. Pat. No. ______.

BACKGROUND

The embodiments of the invention relate to techniques for mechanicallystressing the channel of a metal oxide semiconductor (MOS) transistorstructure, and more particularly, to an N-Channel MOS transistor, toyield enhanced drive current.

A MOS transistor is the basic building block of digital, integratedcircuit components such as processors and memory. The MOS transistor isoften described as a three terminal device, with metal lines beingprovided to its source and drain semiconductor regions and its gateelectrode. These lines are part of patterned, metal layers of anintegrated circuit die and are insulated from each other via interlayerdielectrics. When used as a switch, the MOS transistor is “turned on”when its drive current in a so-called channel region, between its sourceand drain regions, is enabled via a voltage applied to its gateelectrode.

One way to achieve faster switching of a MOS transistor is to design thedevice so that the mobility and velocity of its charge carriers in thechannel region are increased. An appropriate type of stress in thechannel region of an n-channel metal oxide semiconductor (NMOS)transistor is known to improve carrier mobility and velocity, whichresults in increased drive current for the transistor.

Tensile stress (also known as “strain”) in a lateral direction may beobtained by forming a nitride etch stop layer below the first layer ofinter-layer dielectric (also referred to as ILDO) to create stress inthe channel that lies directly below the etch stop layer. See Ito etal., “Mechanical Stress Effect of Etch-Stop Nitride and Its Impact onDeep Submicron Transistor Design”, IEDM-2001, pp. 433-436. To achieveincreased drive current via increased carrier mobility and velocity,thicker nitride layers may be used to meet higher, specified stresslevels. However, thicker nitride layers can present manufacturingdifficulties as well as reliability concerns.

Another technique for obtaining tensile stress in a MOS transistor is tobuild the transistor structure in a silicon substrate that has beengrown on top of a relaxed SiGe buffer layer. The buffer layer pulls thesilicon layer above it, to induce tensile stress in the silicon layer.This structure, however, may require a relatively complex and expensivemanufacturing process.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments of the invention are illustrated by way of example andnot by way of limitation in the figures of the accompanying drawings inwhich like references indicate similar elements. The invention may bestbe understood by referring to the following description and accompanyingdrawings that are used to illustrate embodiments of the invention. Itshould be noted that references to “an” embodiment of the invention inthis disclosure are not necessarily to the same embodiment, and theymean at least one. In the drawings:

FIG. 1 illustrates an example of a conventional MOS transistorstructure;

FIG. 2 illustrates a top view of an example of a MOS transistor thatpoints out the direction of the tensile stress caused by a tensilestress inducing layer formed over the MOS transistor;

FIG. 3 illustrates a top view of an example of a MOS transistor havingmulti-narrow sections in a parallel layout and the direction of thetensile stress caused by a tensile stress inducing layer formed over theMOS transistor;

FIG. 4 illustrates a cross-sectional view of the MOS transistor shown inFIG. 3 having a tensile stress inducing layer formed over the drainregion of the MOS transistor;

FIG. 5 illustrates a cross-sectional view of the MOS transistor shown inFIG. 3 having a tensile stress inducing layer formed over the sourceregion of the MOS transistor;

FIG. 6 illustrates a cross-sectional view of the MOS transistor shown inFIG. 3 having a tensile stress inducing layer formed over the gate ofthe MOS transistor;

FIGS. 7-8 illustrate I_(on) and I_(off) current effect caused by themulti-narrow section layout in the MOS transistor with a nitride etchstop layer formed over the MOS transistor; and

FIG. 9 illustrates exemplary processes of forming an NMOS transistor inaccordance with embodiments of the present invention.

DETAILED DESCRIPTION

Exemplary embodiments are described with reference to specificconfigurations and techniques. Those of ordinary skill in the art willappreciate the various changes and modifications to be made whileremaining within the scope of the appended claims. Additionally, wellknown elements, devices, components, circuits, process steps and thelike are not set forth in detail.

Exemplary embodiments of the present invention pertain to a way toenhance tensile stress (or strain) in a semiconductor device such as anNMOS transistor by increasing tensile stress contribution in Z direction(device width) and in Y direction (device length). In one embodiment, anitride etch stop layer (NESL) is used as a tensile inducing layer.

FIG. 1 illustrates an exemplary semiconductor device 100 (e.g., a MOStransistor). FIG. 1 illustrates haw a tensile stress inducing layer isincorporated into the semiconductor device 100 to create tensile stressin the device 100. The device 100 includes a substrate 102 having asource 104 and a drain 106 regions created therein. The device 100includes a gate electrode 110 that is separated from a channel region112 in the substrate 102 by a thin gate dielectric layer 108 such assilicon oxide, oxide-nitride-oxide, or a high-K dielectric. The gateelectrode 110 is typically formed of a doped semiconductor material suchas polysilicon to minimize resistance of the gate electrode 110. Thematerial of the gate electrode 110 may also be metal. The source 104 andthe drain 106 regions are formed on opposing sides of the gate electrode110. The gate electrode 110 and the gate dielectric layer 108 aretypically referred to as a gate stack. Silicide may be formed (notshown) on the gate electrode 110, the source 104 and the drain 106regions to improve contact by reducing resistance to the gate electrodeand the source/drain regions. Silicide may be formed of a metal materialsuch as cobalt or nickel. In one embodiment, the device 100 includesspacers 114 formed on each side of the gate electrode 110. In certainembodiments, such as a polycide fabrication process, spacers 114 areused to protect the gate stack from being shorted to the source and/ordrain metal contacts during manufacture. However, an embodiment withoutthe spacers may also work.

In FIG. 1, a tensile stress inducing layer such as a nitride etch stoplayer 116 is deposited over the device 100 to introduce tensile stressinto the silicon channel 112. The tensile stress enhances electronmobility and in turn increases drive current and circuit performance.The stress introduced can be divided into three components, one alongthe x direction (perpendicular to the substrate 102), which can bereferred to as D_(xx), one along the y direction (current flowdirection) the D_(yy) and one along the z direction (device widthdirection) the D_(zz).

FIG. 2 illustrates a top view of the device 100 shown in FIG. 1. Thenitride etch stop layer 116 is not shown for clarity purpose. The arrowsindicate the nitride etch stop pulling direction induced upon thesubstrate 102.

Of these three components, the D_(xx) is generally small and difficultto modulate, the D_(zz) is normally weak because the only region wherethe nitride etch stop layer can pull the active silicon in the Zdirection is at the very edge of the device so that its effect is notuniform and the pulling action can happen only if a discontinuity existin the form of a negative shallow trench isolation (STI) step height(STI recess). For this reason currently, little attention is paid tothis potential stress component since it cannot be effectively becontrolled and exploited. On the other end the D_(yy) which is the maincomponent of the stress is able to enhance transistor performance withrespect to an equivalent transistor which makes no use of the tensilecapping layer but is limited by the ability of the tensile layer tostretch a relatively large volume of silicon.

Embodiments of the present invention increases the NMOS performance(e.g., drive current increased at fixed I_(off)) above the alreadyenhanced strain silicon device by about 3 to 10% depending on devicewidth. Embodiments of the present invention enhanced tensile stress inthe device to increase device performance (e.g., increasing current flowor mobility). As will be apparent, embodiments of the present inventioncan increase the NMOS performance essentially without additionalprocesses. The embodiments of the present invention thus make them avery attractive approach for future technologies or scaling.

In one embodiment, a semiconductor device 200, e.g., an NMOS transistor,is created to have a multi-narrow sections in a parallel layout. Themulti-narrow section layout enhances the tensile stress formed in thedevice 200 by a tensile stress inducing layer formed on top of thedevice 200 (FIG. 3). In one embodiment, the tensile stress inducinglayer is a nitride etch stop layer. In another embodiment, the tensilestress inducing layer is an insulation film that is capable of inducinga tensile stress to a substrate upon which the tensile stress inducinglayer is formed. The tensile stress inducing layer is formed on asilicon substrate in one embodiment. The tensile stress inducing layercan also be formed on various types of substrate includingmonocrystalline silicon, polycrystalline silicon, silicon-on-insulator,silicon on silicon-germanium, or other suitable semiconductor substrate.

FIG. 3 illustrates the top view of the device 200. The device 200 isconfigured so that it has a multi-narrow section layout to enhance thetensile stress caused by the tensile stress inducing layer. Enhancingthe tensile stress will enhance current mobility and thus, deviceperformance. The device 200 includes a substrate 202 having a sourceregion 204 and a drain region 206. The source region 204 is divided sothat the source region 204 includes a plurality of separated sections204 a, 204 b, and 204 c. The drain region 206 is also divided so thatthe drain region 206 includes a plurality of separated sections 206 a,206 b, and 206 c. The device 200 is thus referred to as having a devicewith a multi-narrow sections layout. To give the device 200 themulti-narrow section layout, a shallow trench isolation (STI) region 210is formed between each two separated (and adjacent) sections of thesource region 204 and the drain region 206. As illustrated in FIG. 3, anSTI region 210 a is formed between the two source sections 204 a and 204b of the source region 204 and the two drain sections 206 a and 206 b ofthe drain region 206. Also as illustrated in FIG. 3, an STI region 210 bis formed between the two source sections 204 b and 204 c of the sourceregion 204 and the two drain sections 206 b and 206 c of the drainregion 206. The device 200 also includes a gate stack 208 formed on thesubstrate 202. The gate stack 208 is formed between the source region204 and the drain region 206. A tensile stress inducing layer 212 (FIG.4) is formed over the substrate 202. The tensile stress inducing layer212 covers the STI regions 210, the source region 204, the drain region206, and the gate stack 208. As mentioned above, the tensile stressinducing layer 212 is an insulation material capable of causing tensilestress in the substrate. An example of such a tensile stress inducinglayer includes a nitride etch stop layer. The tensile inducing layer 212may have a thickness ranging from about 25 nm to about 150 nm. In oneembodiment, the tensile inducing layer 212 impart a stress value betweenabout 200 mega Pascal to about 300 mega Pascal (total stress value) tothe substrate 201.

FIG. 3 illustrates the top view of regions on the substrate 202 that getthe tensile stress induced by the nitride etch stop layer 212. As can beseen, the nitride etch stop layer 212 can exercise its pulling action onmore surface areas sides and sections in the substrate 202 to enhancethe tensile stress created in the substrate 202. Having multi-narrowsections (204 a-204 c and 206 a-206 c) in the substrate 202 increasesthe pulling action of the nitride etch stop layer 212 as well asenhancing the D_(yy) and D_(zz) component of the tensile stress tocontribute to the total stress and enhance device performance.

FIG. 4 illustrates a cross-sectional view (along the line a-b of FIG. 3)of the drain region 206 of the device 200. The STI regions 210 a-210 bare shown to be recessed, or having surfaces that are slightly below thesurface of the substrate 202 or the surfaces of the drain sections 206a-206 c. Having the STI regions 210 a-210 b being recessed provide evenmore sides or open areas in the substrate 202 for the tensile stressinducing layer 212 to import stress pulling in the substrate 202. TheSTI regions 210 a-210 b can be recessed because some of the material inthe STI regions are etched away during fabrication process, e.g.,cleaning the surface of the substrate 202. In one embodiment, the drainsections 206 a-206 c in total have the same total effective width Z withthe device 100 that has no multi-narrow section layout. For example, asshow in FIG. 2, the device 100 has a total effective width of Z. Z canbe said to be equal to Z₁+Z₂+Z₃ where Z₁ represents the width of section206 a, Z₂ represents the width of section 206 b, and Z₃ represents thewidth of section 206 c. The device 200 thus, can be configured so thatthe source and drain sections in sum has a total effective width of Z.

FIG. 5 illustrates a cross-sectional view of the source region 204 ofthe device 200. The source region 204 is configured similarly to thedrain region 206 previously described. The source region 204 includesthe STI regions 210 a-210 b between sections 204 a, 204 b, and 204 c asshown in FIG. 5. The STI regions 210 a-210 b are also shown to berecessed, or having a surface that is slightly below the surface of thesubstrate 202 or the surfaces of the source sections 204 a-204 c. TheSTI regions 210 a-210 b can be recessed because some of the materials inthe STI regions are etched away during fabrication process, e.g.,cleaning the surface of the substrate 202. In one embodiment, the drainsections 204 a-204 c in total have the same total effective width Z inwhich section 204 a has a width of Z₁, section 204 b has a width of Z₂,and section 204 c has a width of Z₃.

In one embodiment, the nitride etch step layer 212 is conformal. Thenitride etch step layer 21 this conforms to the structure formed on thesubstrate 202. In one embodiment, a silicide layer (not shown) is formedover the sections 204 a-204 c of the source region 204 and the sections206 a-206 c of the drain region 206. In this embodiment, the nitrideetch step layer 212 is formed over the silicide layer.

FIG. 6 illustrates a cross-sectional view of the gate stack 208 of thedevice 200. The gate stack is continuous and not divided into sectionslike the source 204 and drain 206 regions. The nitride etch stop layer212 is formed over the gate stack 208. In one embodiment, a silicidelayer (not shown) is formed over the gate stack 208 and in suchembodiment, the nitride etch stop layer 212 is formed over the silicidelayer.

Dividing the substrate into multiple narrow sections provide more sidesin the substrate 202 for the pulling action of the tensile stressinducing layer. And, more stress induced in the substrate leads tohigher carrier or current mobility. FIG. 7 illustrates the effect ofmulti-narrow section layout the in source/drain regions of the substratefor a semiconductor device (e.g., NMOS). This figure compares aconventional transistor having a tensile stress inducing layer (e.g.,nitride etch stop layer) formed over the transistor as shown in FIGS.1-2 to a transistor having a multi-narrow section layout and a tensilestress inducing layer formed over the transistor as shown in FIGS. 35.In one embodiment, the tensile stress inducing layer is conformal. InFIG. 7, the x-axis indicates the I_(off) current for the device and they-axis indicates the I_(on) current for the device. FIG. 7 shows thatthe , drive current at a fixed I_(off) is higher for a device with amulti-narrow section layout. As can be seen, at a particular fixedI_(off), the current flow through the device is about 9% higher for thedevice with the multi-narrow section layout.

FIG. 8 illustrates that both transistors used in FIG. 7 are switched onat similar or same voltage. In FIG. 8, the x-axis indicates the I_(off)current for the device and the y-axis indicates the threshold voltage(VT) for the device. As shown in this figure, at a particular voltage,(or threshold voltage), the transistor with the multi-narrow sectionlayout has a higher current mobility.

FIG. 9 illustrates an exemplary method of making an NMOS transistor thathas a multi-narrow section layout and a tensile stress inducing layer(such as a nitride etch stop layer) formed over the transistor. At box902, a substrate is provided. The substrate may have regions for sourceand drain. The substrate can be a silicon wafer, a monocrystallinesilicon substrate, a polycrystalline silicon substrate, a substratehaving silicon formed on a silicon-germanium surface, asilicon-on-insulator substrate, or other suitable semiconductorsubstrate.

At box 904, a shallow trench isolation (STI) region is created betweentwo sections of the source region and between two sections of the drainregion forming a device with multi-narrow section layout. There can bemore than two sections for each of the source region and the drainregion as shown in FIGS. 3-4. STI regions can also be created in thesubstrate to isolate one device from another. The STI regions betweensections of the source region and between sections of the drain regionare formed to enhance and increase areas and sides in the substrate forthe tensile stress inducing layer to pull to enhance the tensile stressin the substrate. Methods of creating the STI region are known in theart.

At box 906, a gate stack is formed on the substrate. The gate stack isformed approximately between the source and drain region. To form thegate stack, a dielectric layer is formed on substrate. A gate electrodeis then formed on the dielectric layer. Methods of creating the gatestack are known in the art.

At box 908, the substrate is implanted to create the source region andthe drain region. In some embodiments, spacers may be formed on eachside of the gate stack. At box 910, a tensile stress inducing layer isformed over the substrate including all sections of the source region,all sections of the drain region, and the gate stack. The tensile stressinducing layer thus covers the gate stack, the source region, the drainregion, and the spacers. The tensile stress inducing layer is alsoconformal. The tensile stress inducing layer can be formed usingchemical vapor deposition or other suitable technique. The tensilestress inducing layer is made of an insulation material capable ofcausing tensile stress in the substrate. An example of such a tensilestress inducing layer is a nitride etch stop layer. The tensile stressinducing layer can be other strained insulating film that can pull thesemiconductor material on which it has been created (the substrate).Additionally, the tensile stress inducing layer is made of a materialthat has a different etch rate than the material used to make the STIregion to allow for selective etching, for example, when vias arecreated in the tensile stress inducing layer for contacts to the gatestack, source region, and drain region.

In some embodiments, a silicide layer is formed over the source anddrain regions as well as the gate stack to improve contact to the sourceand drain regions and the gate stack. In such embodiments, the tensilestress inducing layer is formed over the silicide layer and over thesubstrate as previously mentioned.

In some cases, such as in a complementary MOS process flow, a region ofsemiconductor material that will become the source and/or drain of ap-channel MOS (PMOS) transistor, in the same integrated circuit die orin the same semiconductor wafer for the NMOS structure, may be coveredby a suitable layer prior to forming the tensile stress inducing layer.This layer is designed to help avoid inducing tensile stress in thechannel of PMOS transistor structures via the tensile stress inducinglayer, because tensile stress might not promote higher carrier mobilityand velocity in such transistor structures.

At box 912, contact vias are created in the tensile stress inducinglayer to allow to contacts to be made to the source, drain, and gateregions. Conductive traces (e.g., metalization) can be formed on top ofthe tensile stress inducing layer and into the vias to reach the source,drain, and gate regions.

Embodiments of the present invention can be used in conjunction withother methods of creating tensile stress or strain in a semiconductorsubstrate. For instance, a method of enhancing carrier mobility bycreating a tensile strain or stress in silicon material includes forminga layer of silicon on a silicon germanium substrate. The silicongermanium lattice is generally more widely spaced than a pure siliconlattice as a result of the presence of the larger germanium atoms in thelattice. Because the atoms of the silicon lattice align with the morewidely spread silicon germanium lattice, a tensile strain is created inthe silicon layer. The silicon atoms are essentially pulled apart fromone another. In conjunction with the silicon grown on a silicongermanium substrate, the substrate can be divided into many sections andan STI region can be created between each two sections. A tensile stressinducing layer is then formed over the substrate as previouslydescribed. The thickness of the tensile stress inducing layer can becontrolled so that a particular tensile stress value can be obtained.Embodiments of the present invention thus can be used as a method ofcreating strain in a semiconductor substrate, alone or in combinationwith existing methods.

While the invention has been described in terms of several embodiments,those of ordinary skill in the art will recognize that the invention isnot limited to the embodiments described. The method and apparatus ofthe invention, but can be practiced with modification and alterationwithin the spirit and scope of the appended claims. The description isthus to be regarded as illustrative instead of limiting.

Having disclosed exemplary embodiments, modifications and variations maybe made to the disclosed embodiments while remaining within the spiritand scope of the invention as defined by the appended claims.

1.-23. (canceled)
 24. A semiconductor device comprising: a substratehaving a source region and a drain region, each of the source region andthe drain region includes a plurality of separated sections; a shallowtrench isolation (STI) region formed between each two separated sectionsof the source region and between each two separated sections of thedrain region; a gate stack formed on the substrate; and a tensile stressinducing layer formed over the substrate, the tensile stress inducinglayer covering the STI regions, the source region, and the drain region.25. The semiconductor device of claim 24 further comprising: a silicidelayer formed over the source region, the drain region, and the gatestack and wherein the tensile stress inducing layer formed over thesubstrate is formed over the silicide layer.
 26. The semiconductordevice of claim 24 wherein the gate stack includes a gate electrodelayer and a gate dielectric layer.
 27. The semiconductor device of claim24 further comprising: contacts interconnected to the source region, thedrain region, and the gate stack.
 28. The semiconductor device of claim24 wherein the STI regions have surfaces that are below the surfaces ofthe substrate.
 29. The semiconductor device of claim 24 wherein thetensile stress inducing layer is a nitride etch stop layer.
 30. Thesemiconductor device of claim 24 wherein the tensile stress inducinglayer introduces tensile stress into a channel region in the substrate.31. The semiconductor device of claim 24 wherein the substrate is one ofa silicon comprising substrate, a monocrystalline silicon substrate, agermanium silicon substrate, and silicon on insulator substrate.
 32. Thesemiconductor device of claim 24 wherein the tensile stress inducinglayer has a thickness between about 25 nm and about 150 nm.
 33. Thesemiconductor device of claim 24 wherein the tensile stress inducinglayer introduces a tensile stress ranging between about 200 mega Pascaland about 300 mega Pascal into the substrate.
 34. The semiconductordevice of claim 24 wherein the tensile stress inducing layer is aconformal layer.